Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
60 V
Package Type
TO-252AA
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
28 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
-3V
Minimum Gate Threshold Voltage
-1V
Maximum Power Dissipation
113 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
6.22mm
Maximum Operating Temperature
+150 °C
Length
6.73mm
Typical Gate Charge @ Vgs
110 nC @ 10 V
Minimum Operating Temperature
-55 °C
Height
2.38mm
Forward Diode Voltage
-1.6V
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 2,85
tk (pakis 5) (ilma käibemaksuta)
€ 3,477
tk (pakis 5) (koos käibemaksuga)
5
€ 2,85
tk (pakis 5) (ilma käibemaksuta)
€ 3,477
tk (pakis 5) (koos käibemaksuga)
5
Osta lahtiselt
kogus | Ühikuhind | Per Pakend |
---|---|---|
5 - 45 | € 2,85 | € 14,25 |
50 - 120 | € 2,60 | € 13,00 |
125 - 245 | € 2,45 | € 12,25 |
250 - 495 | € 2,15 | € 10,75 |
500+ | € 2,00 | € 10,00 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
60 V
Package Type
TO-252AA
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
28 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
-3V
Minimum Gate Threshold Voltage
-1V
Maximum Power Dissipation
113 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
6.22mm
Maximum Operating Temperature
+150 °C
Length
6.73mm
Typical Gate Charge @ Vgs
110 nC @ 10 V
Minimum Operating Temperature
-55 °C
Height
2.38mm
Forward Diode Voltage
-1.6V