Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
2.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Length
10.41mm
Typical Gate Charge @ Vgs
126 nC @ 10 V
Width
9.65mm
Number of Elements per Chip
1
Forward Diode Voltage
1.5V
Height
4.82mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad
N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,628
tk (pakis 2) (ilma käibemaksuta)
€ 0,766
tk (pakis 2) (koos käibemaksuga)
2
€ 0,628
tk (pakis 2) (ilma käibemaksuta)
€ 0,766
tk (pakis 2) (koos käibemaksuga)
2
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
2.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Length
10.41mm
Typical Gate Charge @ Vgs
126 nC @ 10 V
Width
9.65mm
Number of Elements per Chip
1
Forward Diode Voltage
1.5V
Height
4.82mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad