P-channel MOSFET 60V 185mA 6 Ohm SOT-23

RS tootekood: 152-6382PBränd: VishayTootja Part nr.: TP0610K-T1-E3
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

185 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

9 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

-3V

Minimum Gate Threshold Voltage

-1V

Maximum Power Dissipation

350 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

2.64mm

Length

3.04mm

Typical Gate Charge @ Vgs

1.7 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

-1.4V

Height

1.02mm

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Lao andmed ajutiselt ei ole saadaval.

€ 30,38

€ 0,243 tk (rullis) (ilma käibemaksuta)

€ 37,06

€ 0,296 tk (rullis) (koos käibemaksuga)

P-channel MOSFET 60V 185mA 6 Ohm SOT-23
Valige pakendi tüüp

€ 30,38

€ 0,243 tk (rullis) (ilma käibemaksuta)

€ 37,06

€ 0,296 tk (rullis) (koos käibemaksuga)

P-channel MOSFET 60V 185mA 6 Ohm SOT-23
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Lao andmed ajutiselt ei ole saadaval.

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kogusÜhikuhindPer Rull
125 - 475€ 0,243€ 6,08
500 - 1225€ 0,204€ 5,10
1250+€ 0,20€ 5,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

185 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

9 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

-3V

Minimum Gate Threshold Voltage

-1V

Maximum Power Dissipation

350 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

2.64mm

Length

3.04mm

Typical Gate Charge @ Vgs

1.7 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

-1.4V

Height

1.02mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more