Vishay VS-GT175DA120U IGBT, 288 A 1200 V, 4-Pin SOT-227, Panel Mount

RS tootekood: 877-6415Bränd: VishayTootja Part nr.: VS-GT175DA120U
brand-logo
View all in IGBTs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Maximum Continuous Collector Current

288 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

1.09 kW

Package Type

SOT-227

Mounting Type

Panel Mount

Channel Type

N

Pin Count

4

Switching Speed

30kHz

Transistor Configuration

Single

Dimensions

38.3 x 25.7 x 12.3mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+150 °C

Päritoluriik

Philippines

Toote üksikasjad

IGBT Modules, Vishay

Vishay’s high-efficiency IGBT modules come with a choice of PT, NPT, and Trench IGBT technologies. The range includes single switches, inverters, choppers, half-bridges, or in custom configurations. These IGBT Modules are designed to be used as a main switching device in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drives, and power factor correction systems.

Typical applications include boost and buck converters, forward and double forward converters, half bridges, full bridges (H-bridge), and three-phase bridges.

IGBT Modules, Vishay

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 84,50

tk (ilma käibemaksuta)

€ 103,09

tk (koos käibemaksuga)

Vishay VS-GT175DA120U IGBT, 288 A 1200 V, 4-Pin SOT-227, Panel Mount

€ 84,50

tk (ilma käibemaksuta)

€ 103,09

tk (koos käibemaksuga)

Vishay VS-GT175DA120U IGBT, 288 A 1200 V, 4-Pin SOT-227, Panel Mount
Lao andmed ajutiselt ei ole saadaval.

Osta lahtiselt

kogusÜhikuhind
1 - 9€ 84,50
10 - 59€ 76,00
60 - 99€ 69,50
100 - 159€ 67,00
160+€ 65,50

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Maximum Continuous Collector Current

288 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

1.09 kW

Package Type

SOT-227

Mounting Type

Panel Mount

Channel Type

N

Pin Count

4

Switching Speed

30kHz

Transistor Configuration

Single

Dimensions

38.3 x 25.7 x 12.3mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+150 °C

Päritoluriik

Philippines

Toote üksikasjad

IGBT Modules, Vishay

Vishay’s high-efficiency IGBT modules come with a choice of PT, NPT, and Trench IGBT technologies. The range includes single switches, inverters, choppers, half-bridges, or in custom configurations. These IGBT Modules are designed to be used as a main switching device in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drives, and power factor correction systems.

Typical applications include boost and buck converters, forward and double forward converters, half bridges, full bridges (H-bridge), and three-phase bridges.

IGBT Modules, Vishay

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more