Tehnilised dokumendid
Spetsifikatsioonid:
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
1700 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.1V
Minimum Gate Threshold Voltage
2.4V
Maximum Power Dissipation
69 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-5 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
16.13mm
Typical Gate Charge @ Vgs
13 nC @ 20 V, 13 nC @ 5 V
Width
5.21mm
Transistor Material
SiC
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
3.8V
Height
21.1mm
Päritoluriik
China
Toote üksikasjad
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
MOSFET Transistors, Wolfspeed
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Palun kontrollige hiljem uuesti.
€ 11,80
tk (ilma käibemaksuta)
€ 14,40
tk (koos käibemaksuga)
1
€ 11,80
tk (ilma käibemaksuta)
€ 14,40
tk (koos käibemaksuga)
1
Osta lahtiselt
kogus | Ühikuhind |
---|---|
1 - 4 | € 11,80 |
5 - 9 | € 11,10 |
10 - 29 | € 10,90 |
30 - 89 | € 10,60 |
90+ | € 10,30 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
1700 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.1V
Minimum Gate Threshold Voltage
2.4V
Maximum Power Dissipation
69 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-5 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
16.13mm
Typical Gate Charge @ Vgs
13 nC @ 20 V, 13 nC @ 5 V
Width
5.21mm
Transistor Material
SiC
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
3.8V
Height
21.1mm
Päritoluriik
China
Toote üksikasjad
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.