SiC N-Channel MOSFET, 63 A, 900 V, 4-Pin TO-247-4 Wolfspeed C3M0030090K
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
63 A
Maximum Drain Source Voltage
900 V
Package Type
TO-247-4
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
30 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
1.7V
Maximum Power Dissipation
149 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, 19 V
Width
5.21mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
SiC
Length
16.13mm
Typical Gate Charge @ Vgs
87 nC @ 4/15V
Height
23.6mm
Minimum Operating Temperature
-55 °C
Päritoluriik
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 41,00
tk (ilma käibemaksuta)
€ 50,02
tk (koos käibemaksuga)
1
€ 41,00
tk (ilma käibemaksuta)
€ 50,02
tk (koos käibemaksuga)
1
Osta lahtiselt
| kogus | Ühikuhind |
|---|---|
| 1 - 9 | € 41,00 |
| 10+ | € 40,00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
63 A
Maximum Drain Source Voltage
900 V
Package Type
TO-247-4
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
30 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
1.7V
Maximum Power Dissipation
149 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, 19 V
Width
5.21mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
SiC
Length
16.13mm
Typical Gate Charge @ Vgs
87 nC @ 4/15V
Height
23.6mm
Minimum Operating Temperature
-55 °C
Päritoluriik
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products