SiC N-Channel MOSFET, 35 A, 1000 V, 4-Pin TO-247-4 Wolfspeed C3M0065100K

RS tootekood: 125-3453Bränd: WolfspeedTootja Part nr.: C3M0065100K
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

1000 V

Series

C3M

Package Type

TO-247-4

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

90 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

113.5 W

Maximum Gate Source Voltage

-8 V, +19 V

Transistor Material

SiC

Length

16.13mm

Typical Gate Charge @ Vgs

35 nC @ 15 V, 35 nC @ 4 V

Maximum Operating Temperature

+150 °C

Width

5.21mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

4.8V

Height

23.6mm

Toote üksikasjad

Silicon Carbide Power MOSFET, C3M Series, Cree Inc.

MOSFET Transistors, Cree Inc.

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€ 22,40

tk (ilma käibemaksuta)

€ 27,33

tk (koos käibemaksuga)

SiC N-Channel MOSFET, 35 A, 1000 V, 4-Pin TO-247-4 Wolfspeed C3M0065100K
Valige pakendi tüüp

€ 22,40

tk (ilma käibemaksuta)

€ 27,33

tk (koos käibemaksuga)

SiC N-Channel MOSFET, 35 A, 1000 V, 4-Pin TO-247-4 Wolfspeed C3M0065100K
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Osta lahtiselt

kogusÜhikuhind
1 - 24€ 22,40
25 - 74€ 20,40
75 - 149€ 19,90
150+€ 19,40

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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

1000 V

Series

C3M

Package Type

TO-247-4

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

90 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

113.5 W

Maximum Gate Source Voltage

-8 V, +19 V

Transistor Material

SiC

Length

16.13mm

Typical Gate Charge @ Vgs

35 nC @ 15 V, 35 nC @ 4 V

Maximum Operating Temperature

+150 °C

Width

5.21mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

4.8V

Height

23.6mm

Toote üksikasjad

Silicon Carbide Power MOSFET, C3M Series, Cree Inc.

MOSFET Transistors, Cree Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more