SiC N-Channel MOSFET, 22 A, 900 V, 7-Pin D2PAK Wolfspeed C3M0120090J
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
22 A
Maximum Drain Source Voltage
900 V
Package Type
TO-263-7
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
120 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
83 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, 18 V
Maximum Operating Temperature
+150 °C
Transistor Material
SiC
Length
10.23mm
Typical Gate Charge @ Vgs
17.3 nC @ 4/15V
Width
9.12mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
4.57mm
Päritoluriik
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 9,80
tk (pakis 2) (ilma käibemaksuta)
€ 11,956
tk (pakis 2) (koos käibemaksuga)
2
€ 9,80
tk (pakis 2) (ilma käibemaksuta)
€ 11,956
tk (pakis 2) (koos käibemaksuga)
2
Osta lahtiselt
| kogus | Ühikuhind | Per Pakend |
|---|---|---|
| 2 - 18 | € 9,80 | € 19,60 |
| 20+ | € 9,70 | € 19,40 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
22 A
Maximum Drain Source Voltage
900 V
Package Type
TO-263-7
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
120 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
83 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, 18 V
Maximum Operating Temperature
+150 °C
Transistor Material
SiC
Length
10.23mm
Typical Gate Charge @ Vgs
17.3 nC @ 4/15V
Width
9.12mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
4.57mm
Päritoluriik
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products