SiC N-Channel MOSFET, 11 A, 900 V, 7-Pin D2PAK Wolfspeed C3M0280090J

RS tootekood: 192-3509Bränd: WolfspeedTootja Part nr.: C3M0280090J
brand-logo
View all in MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

900 V

Package Type

TO-263-7

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, 18 V

Typical Gate Charge @ Vgs

9.5 nC @ 4/15V

Width

9.12mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

SiC

Length

10.23mm

Height

4.57mm

Minimum Operating Temperature

-55 °C

Päritoluriik

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 5,40

tk (pakis 2) (ilma käibemaksuta)

€ 6,588

tk (pakis 2) (koos käibemaksuga)

SiC N-Channel MOSFET, 11 A, 900 V, 7-Pin D2PAK Wolfspeed C3M0280090J

€ 5,40

tk (pakis 2) (ilma käibemaksuta)

€ 6,588

tk (pakis 2) (koos käibemaksuga)

SiC N-Channel MOSFET, 11 A, 900 V, 7-Pin D2PAK Wolfspeed C3M0280090J
Lao andmed ajutiselt ei ole saadaval.

Osta lahtiselt

kogusÜhikuhindPer Pakend
2 - 18€ 5,40€ 10,80
20+€ 5,30€ 10,60

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

900 V

Package Type

TO-263-7

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, 18 V

Typical Gate Charge @ Vgs

9.5 nC @ 4/15V

Width

9.12mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

SiC

Length

10.23mm

Height

4.57mm

Minimum Operating Temperature

-55 °C

Päritoluriik

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more