Hex SiC N-Channel MOSFET, 29 A, 1200 V, 28-Pin Module Wolfspeed CCS020M12CM2
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
29 A
Maximum Drain Source Voltage
1200 V
Package Type
Module
Mounting Type
Screw Mount
Pin Count
28
Maximum Drain Source Resistance
208 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.7V
Maximum Power Dissipation
167 W
Transistor Configuration
3 Phase
Maximum Gate Source Voltage
-10 V, +25 V
Width
47mm
Number of Elements per Chip
6
Maximum Operating Temperature
+150 °C
Transistor Material
SiC
Length
108mm
Typical Gate Charge @ Vgs
61.5 nC @ 20 V, 61.5 nC @ 5 V
Height
17mm
Forward Diode Voltage
2.3V
Minimum Operating Temperature
-40 °C
Päritoluriik
China
Toote üksikasjad
Wolfspeed Silicon Carbide Power MOSFET Modules
Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers.
MOSFET Transistors, Wolfspeed
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Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 358,00
tk (pakis 10) (ilma käibemaksuta)
€ 436,76
tk (pakis 10) (koos käibemaksuga)
10
€ 358,00
tk (pakis 10) (ilma käibemaksuta)
€ 436,76
tk (pakis 10) (koos käibemaksuga)
10
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
29 A
Maximum Drain Source Voltage
1200 V
Package Type
Module
Mounting Type
Screw Mount
Pin Count
28
Maximum Drain Source Resistance
208 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.7V
Maximum Power Dissipation
167 W
Transistor Configuration
3 Phase
Maximum Gate Source Voltage
-10 V, +25 V
Width
47mm
Number of Elements per Chip
6
Maximum Operating Temperature
+150 °C
Transistor Material
SiC
Length
108mm
Typical Gate Charge @ Vgs
61.5 nC @ 20 V, 61.5 nC @ 5 V
Height
17mm
Forward Diode Voltage
2.3V
Minimum Operating Temperature
-40 °C
Päritoluriik
China
Toote üksikasjad
Wolfspeed Silicon Carbide Power MOSFET Modules
Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers.
MOSFET Transistors, Wolfspeed
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products