Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonTransistor Type
NPN
Maximum Continuous Collector Current
500 mA
Maximum Collector Emitter Voltage
60 V
Maximum Emitter Base Voltage
10 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Transistor Configuration
Single
Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
2000
Maximum Base Emitter Saturation Voltage
1.5 V
Maximum Collector Emitter Saturation Voltage
1 V
Maximum Collector Cut-off Current
0.01mA
Dimensions
2.9 x 1.3 x 0.9mm
Height
0.9mm
Width
1.3mm
Maximum Power Dissipation
360 mW
Maximum Operating Temperature
+150 °C
Length
2.9mm
Päritoluriik
China
Toote üksikasjad
Darlington Transistors, Infineon
Bipolar Transistors, Infineon
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,047
tk (rullis 3000) (ilma käibemaksuta)
€ 0,057
tk (rullis 3000) (koos käibemaksuga)
3000
€ 0,047
tk (rullis 3000) (ilma käibemaksuta)
€ 0,057
tk (rullis 3000) (koos käibemaksuga)
3000
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonTransistor Type
NPN
Maximum Continuous Collector Current
500 mA
Maximum Collector Emitter Voltage
60 V
Maximum Emitter Base Voltage
10 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Transistor Configuration
Single
Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
2000
Maximum Base Emitter Saturation Voltage
1.5 V
Maximum Collector Emitter Saturation Voltage
1 V
Maximum Collector Cut-off Current
0.01mA
Dimensions
2.9 x 1.3 x 0.9mm
Height
0.9mm
Width
1.3mm
Maximum Power Dissipation
360 mW
Maximum Operating Temperature
+150 °C
Length
2.9mm
Päritoluriik
China
Toote üksikasjad