Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
170 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
360 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.3mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
2.9mm
Typical Gate Charge @ Vgs
1 nC @ 10 V
Height
1mm
Series
SIPMOS
Minimum Operating Temperature
-55 °C
Päritoluriik
China
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,058
tk (rullis 3000) (ilma käibemaksuta)
€ 0,071
tk (rullis 3000) (koos käibemaksuga)
3000
€ 0,058
tk (rullis 3000) (ilma käibemaksuta)
€ 0,071
tk (rullis 3000) (koos käibemaksuga)
3000
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
170 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
360 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.3mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
2.9mm
Typical Gate Charge @ Vgs
1 nC @ 10 V
Height
1mm
Series
SIPMOS
Minimum Operating Temperature
-55 °C
Päritoluriik
China