Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
64 A
Maximum Drain Source Voltage
250 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Number of Elements per Chip
1
Width
10.25mm
Maximum Operating Temperature
+175 °C
Length
10mm
Typical Gate Charge @ Vgs
67 nC @ 10 V
Series
IPB64N25S3-20
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
4.4mm
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 6,40
tk (pakis 5) (ilma käibemaksuta)
€ 7,808
tk (pakis 5) (koos käibemaksuga)
5
€ 6,40
tk (pakis 5) (ilma käibemaksuta)
€ 7,808
tk (pakis 5) (koos käibemaksuga)
5
Osta lahtiselt
kogus | Ühikuhind | Per Pakend |
---|---|---|
5 - 5 | € 6,40 | € 32,00 |
10 - 20 | € 5,40 | € 27,00 |
25 - 45 | € 5,10 | € 25,50 |
50 - 120 | € 4,70 | € 23,50 |
125+ | € 4,40 | € 22,00 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
64 A
Maximum Drain Source Voltage
250 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Number of Elements per Chip
1
Width
10.25mm
Maximum Operating Temperature
+175 °C
Length
10mm
Typical Gate Charge @ Vgs
67 nC @ 10 V
Series
IPB64N25S3-20
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
4.4mm