Infineon N-Channel MOSFET, 1.2 A, 30 V, 3-Pin SOT-23 IRLML2803TRPBF

RS tootekood: 302-022PBränd: InfineonTootja Part nr.: IRLML2803TRPBF
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

1.2 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

250 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

540 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

3.3 nC @ 10 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.04mm

Height

1.02mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Toote üksikasjad

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Lao andmed ajutiselt ei ole saadaval.

€ 14,80

€ 0,296 tk (rullis) (ilma käibemaksuta)

€ 18,06

€ 0,361 tk (rullis) (koos käibemaksuga)

Infineon N-Channel MOSFET, 1.2 A, 30 V, 3-Pin SOT-23 IRLML2803TRPBF
Valige pakendi tüüp

Tootmispakett (Rull)

Valige pakendi tüüp

Standard - each

Saadaval mitmekordselt 5.

Tootmine -

Saadaval mitmekordselt 5.

Soovitatav suurte koguste tellimuste korral. Tooted on pakendatud masinatesse sisestamiseks, mis võimaldab teil parandada tootmise efektiivsust.

50

Saadaval mitmekordselt 5
50€ 14,80
55€ 16,28
60€ 17,76
65€ 19,24
70€ 20,72
75€ 22,20
80€ 23,68
85€ 25,16
90€ 26,64
95€ 28,12
100€ 29,60
105€ 31,08
110€ 32,56
115€ 34,04
120€ 35,52

€ 14,80

€ 0,296 tk (rullis) (ilma käibemaksuta)

€ 18,06

€ 0,361 tk (rullis) (koos käibemaksuga)

Infineon N-Channel MOSFET, 1.2 A, 30 V, 3-Pin SOT-23 IRLML2803TRPBF
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Tootmispakett (Rull)

Valige pakendi tüüp

Standard - each

Saadaval mitmekordselt 5.

Tootmine -

Saadaval mitmekordselt 5.

Soovitatav suurte koguste tellimuste korral. Tooted on pakendatud masinatesse sisestamiseks, mis võimaldab teil parandada tootmise efektiivsust.

50

Saadaval mitmekordselt 5
50€ 14,80
55€ 16,28
60€ 17,76
65€ 19,24
70€ 20,72
75€ 22,20
80€ 23,68
85€ 25,16
90€ 26,64
95€ 28,12
100€ 29,60
105€ 31,08
110€ 32,56
115€ 34,04
120€ 35,52

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

kogusÜhikuhindPer Rull
50 - 245€ 0,296€ 1,48
250 - 495€ 0,23€ 1,15
500 - 1245€ 0,182€ 0,91
1250+€ 0,158€ 0,79

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

1.2 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

250 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

540 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

3.3 nC @ 10 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.04mm

Height

1.02mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Toote üksikasjad

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more