Nexperia PBSS4140DPN,115 Dual NPN/PNP Transistor, 1 A, 40 V, 6-Pin TSOP
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
NexperiaTransistor Type
NPN/PNP
Maximum DC Collector Current
1 A
Maximum Collector Emitter Voltage
40 V
Package Type
TSOP
Mounting Type
Surface Mount
Maximum Power Dissipation
370 mW
Minimum DC Current Gain
300
Transistor Configuration
Isolated
Maximum Collector Base Voltage
40 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
150 MHz
Pin Count
6
Number of Elements per Chip
2
Dimensions
1 x 3.1 x 1.7mm
Maximum Operating Temperature
+150 °C
Päritoluriik
Malaysia
Toote üksikasjad
Low Saturation Voltage Dual NPN/PNP Transistors, Nexperia
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage Dual NPN/PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
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Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,382
tk (pakis 10) (ilma käibemaksuta)
€ 0,466
tk (pakis 10) (koos käibemaksuga)
Standard
10
€ 0,382
tk (pakis 10) (ilma käibemaksuta)
€ 0,466
tk (pakis 10) (koos käibemaksuga)
Standard
10
Osta lahtiselt
| kogus | Ühikuhind | Per Pakend |
|---|---|---|
| 10 - 40 | € 0,382 | € 3,82 |
| 50 - 90 | € 0,312 | € 3,12 |
| 100+ | € 0,249 | € 2,49 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
NexperiaTransistor Type
NPN/PNP
Maximum DC Collector Current
1 A
Maximum Collector Emitter Voltage
40 V
Package Type
TSOP
Mounting Type
Surface Mount
Maximum Power Dissipation
370 mW
Minimum DC Current Gain
300
Transistor Configuration
Isolated
Maximum Collector Base Voltage
40 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
150 MHz
Pin Count
6
Number of Elements per Chip
2
Dimensions
1 x 3.1 x 1.7mm
Maximum Operating Temperature
+150 °C
Päritoluriik
Malaysia
Toote üksikasjad
Low Saturation Voltage Dual NPN/PNP Transistors, Nexperia
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage Dual NPN/PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products