Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ON SemiconductorChannel Type
N
Idss Drain-Source Cut-off Current
50 → 150mA
Maximum Drain Source Voltage
0.4 V
Maximum Gate Source Voltage
-30 V
Maximum Drain Gate Voltage
30V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
30 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.92 x 1.3 x 0.93mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
2.92mm
Height
0.93mm
Width
1.3mm
Toote üksikasjad
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,306
tk (pakis 50) (ilma käibemaksuta)
€ 0,373
tk (pakis 50) (koos käibemaksuga)
50
€ 0,306
tk (pakis 50) (ilma käibemaksuta)
€ 0,373
tk (pakis 50) (koos käibemaksuga)
50
Osta lahtiselt
kogus | Ühikuhind | Per Pakend |
---|---|---|
50 - 200 | € 0,306 | € 15,30 |
250 - 450 | € 0,139 | € 6,95 |
500 - 2450 | € 0,133 | € 6,65 |
2500 - 4950 | € 0,112 | € 5,60 |
5000+ | € 0,098 | € 4,90 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ON SemiconductorChannel Type
N
Idss Drain-Source Cut-off Current
50 → 150mA
Maximum Drain Source Voltage
0.4 V
Maximum Gate Source Voltage
-30 V
Maximum Drain Gate Voltage
30V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
30 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.92 x 1.3 x 0.93mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
2.92mm
Height
0.93mm
Width
1.3mm
Toote üksikasjad
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.