Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
6.5 A
Maximum Drain Source Voltage
20 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
49 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
12 nC @ 4.5 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
2
Height
1.5mm
Minimum Operating Temperature
-55 °C
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,511
tk (pakis 25) (ilma käibemaksuta)
€ 0,623
tk (pakis 25) (koos käibemaksuga)
25
€ 0,511
tk (pakis 25) (ilma käibemaksuta)
€ 0,623
tk (pakis 25) (koos käibemaksuga)
25
Osta lahtiselt
kogus | Ühikuhind | Per Pakend |
---|---|---|
25 - 25 | € 0,511 | € 12,78 |
50 - 225 | € 0,42 | € 10,50 |
250 - 475 | € 0,341 | € 8,52 |
500 - 975 | € 0,297 | € 7,42 |
1000+ | € 0,265 | € 6,62 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
6.5 A
Maximum Drain Source Voltage
20 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
49 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
12 nC @ 4.5 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
2
Height
1.5mm
Minimum Operating Temperature
-55 °C