Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
19 A
Maximum Drain Source Voltage
650 V
Package Type
TO220F
Series
SuperFET III
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
165 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V ac/dc
Width
4.6mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
10.3mm
Typical Gate Charge @ Vgs
35 nC @ 10 V
Height
15.7mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Toote üksikasjad
N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 2,25
tk (torus 50) (ilma käibemaksuta)
€ 2,745
tk (torus 50) (koos käibemaksuga)
50
€ 2,25
tk (torus 50) (ilma käibemaksuta)
€ 2,745
tk (torus 50) (koos käibemaksuga)
50
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
19 A
Maximum Drain Source Voltage
650 V
Package Type
TO220F
Series
SuperFET III
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
165 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V ac/dc
Width
4.6mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
10.3mm
Typical Gate Charge @ Vgs
35 nC @ 10 V
Height
15.7mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Toote üksikasjad