Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
10 A dc
Maximum Collector Emitter Voltage
100 V dc
Maximum Emitter Base Voltage
5 V dc
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
100
Maximum Collector Base Voltage
100 V dc
Maximum Collector Emitter Saturation Voltage
3 V dc
Maximum Operating Temperature
+150 °C
Length
10.63mm
Height
16.12mm
Width
4.9mm
Maximum Power Dissipation
40 W
Minimum Operating Temperature
-65 °C
Dimensions
10.63 x 4.9 x 16.12mm
Päritoluriik
Korea, Republic Of
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 1,70
tk (pakis 10) (ilma käibemaksuta)
€ 2,074
tk (pakis 10) (koos käibemaksuga)
Standard
10
€ 1,70
tk (pakis 10) (ilma käibemaksuta)
€ 2,074
tk (pakis 10) (koos käibemaksuga)
Standard
10
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
10 A dc
Maximum Collector Emitter Voltage
100 V dc
Maximum Emitter Base Voltage
5 V dc
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
100
Maximum Collector Base Voltage
100 V dc
Maximum Collector Emitter Saturation Voltage
3 V dc
Maximum Operating Temperature
+150 °C
Length
10.63mm
Height
16.12mm
Width
4.9mm
Maximum Power Dissipation
40 W
Minimum Operating Temperature
-65 °C
Dimensions
10.63 x 4.9 x 16.12mm
Päritoluriik
Korea, Republic Of