N-Channel MOSFET, 915 mA, 20 V, 3-Pin SC-75 onsemi NTA4153NT1G

RS tootekood: 773-7872Bränd: onsemiTootja Part nr.: NTA4153NT1G
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

915 mA

Maximum Drain Source Voltage

20 V

Package Type

SC-75

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

9.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-6 V, +6 V

Maximum Operating Temperature

+150 °C

Length

0.8mm

Typical Gate Charge @ Vgs

1.82 nC @ 4.5 V

Number of Elements per Chip

1

Width

1.6mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

0.8mm

Toote üksikasjad

N-Channel Power MOSFET, 20V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 0,304

tk (pakis 10) (ilma käibemaksuta)

€ 0,371

tk (pakis 10) (koos käibemaksuga)

N-Channel MOSFET, 915 mA, 20 V, 3-Pin SC-75 onsemi NTA4153NT1G
Valige pakendi tüüp

€ 0,304

tk (pakis 10) (ilma käibemaksuta)

€ 0,371

tk (pakis 10) (koos käibemaksuga)

N-Channel MOSFET, 915 mA, 20 V, 3-Pin SC-75 onsemi NTA4153NT1G
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Osta lahtiselt

kogusÜhikuhindPer Pakend
10 - 90€ 0,304€ 3,04
100 - 190€ 0,21€ 2,10
200 - 740€ 0,132€ 1,32
750 - 1490€ 0,116€ 1,16
1500+€ 0,10€ 1,00

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

915 mA

Maximum Drain Source Voltage

20 V

Package Type

SC-75

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

9.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-6 V, +6 V

Maximum Operating Temperature

+150 °C

Length

0.8mm

Typical Gate Charge @ Vgs

1.82 nC @ 4.5 V

Number of Elements per Chip

1

Width

1.6mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

0.8mm

Toote üksikasjad

N-Channel Power MOSFET, 20V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more