N-Channel MOSFET, 250 A, 60 V, 4 + Tab-Pin DFN onsemi NTMFS5H600NLT1G

RS tootekood: 126-3477Bränd: onsemiTootja Part nr.: NTMFS5H600NLT1G
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

250 A

Maximum Drain Source Voltage

60 V

Series

NTMFS5H600NL

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

4 + Tab

Maximum Drain Source Resistance

1.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

160 W

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.1mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.1mm

Typical Gate Charge @ Vgs

89 nC @ 10 V

Height

1.05mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

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N-Channel Power MOSFET, 60V, ON Semiconductor

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Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 8,10

tk (pakis 5) (ilma käibemaksuta)

€ 9,882

tk (pakis 5) (koos käibemaksuga)

N-Channel MOSFET, 250 A, 60 V, 4 + Tab-Pin DFN onsemi NTMFS5H600NLT1G
Valige pakendi tüüp

€ 8,10

tk (pakis 5) (ilma käibemaksuta)

€ 9,882

tk (pakis 5) (koos käibemaksuga)

N-Channel MOSFET, 250 A, 60 V, 4 + Tab-Pin DFN onsemi NTMFS5H600NLT1G
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Osta lahtiselt

kogusÜhikuhindPer Pakend
5 - 45€ 8,10€ 40,50
50 - 120€ 5,00€ 25,00
125 - 245€ 4,45€ 22,25
250 - 495€ 4,35€ 21,75
500+€ 4,20€ 21,00

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

250 A

Maximum Drain Source Voltage

60 V

Series

NTMFS5H600NL

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

4 + Tab

Maximum Drain Source Resistance

1.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

160 W

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.1mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.1mm

Typical Gate Charge @ Vgs

89 nC @ 10 V

Height

1.05mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Toote üksikasjad

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more