Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
203 A
Maximum Drain Source Voltage
80 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
3.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.1mm
Typical Gate Charge @ Vgs
85 nC @ 10 V
Width
5.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.1mm
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 6,00
tk (pakis 5) (ilma käibemaksuta)
€ 7,32
tk (pakis 5) (koos käibemaksuga)
5
€ 6,00
tk (pakis 5) (ilma käibemaksuta)
€ 7,32
tk (pakis 5) (koos käibemaksuga)
5
Osta lahtiselt
kogus | Ühikuhind | Per Pakend |
---|---|---|
5 - 5 | € 6,00 | € 30,00 |
10 - 95 | € 5,10 | € 25,50 |
100 - 245 | € 4,10 | € 20,50 |
250 - 495 | € 3,85 | € 19,25 |
500+ | € 3,60 | € 18,00 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
203 A
Maximum Drain Source Voltage
80 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
3.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.1mm
Typical Gate Charge @ Vgs
85 nC @ 10 V
Width
5.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.1mm