SiC N-Channel MOSFET Transistor, 17 A, 1200 V, 4-Pin TO-247-4 onsemi NVHL160N120SC1

RS tootekood: 202-5746Bränd: onsemiTootja Part nr.: NVHL160N120SC1
brand-logo
Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

1200 V

Series

NVH

Package Type

TO-247-4

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

0.16 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.3V

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 7,40

tk (torus 450) (ilma käibemaksuta)

€ 9,028

tk (torus 450) (koos käibemaksuga)

SiC N-Channel MOSFET Transistor, 17 A, 1200 V, 4-Pin TO-247-4 onsemi NVHL160N120SC1

€ 7,40

tk (torus 450) (ilma käibemaksuta)

€ 9,028

tk (torus 450) (koos käibemaksuga)

SiC N-Channel MOSFET Transistor, 17 A, 1200 V, 4-Pin TO-247-4 onsemi NVHL160N120SC1
Lao andmed ajutiselt ei ole saadaval.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

1200 V

Series

NVH

Package Type

TO-247-4

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

0.16 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.3V

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more