Dual N-Channel MOSFET, 74 A, 80 V, 8-Pin DFN onsemi NVMFD6H840NLWFT1GOS

RS tootekood: 195-2670Bränd: onsemiTootja Part nr.: NVMFD6H840NLWFT1GIMPA: 0
brand-logo
View all in MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Mode

Enhancement

Automotive Standard

AEC-Q101

Channel Type

N

Number of Elements per Chip

2

Transistor Configuration

Dual

Minimum Operating Temperature

-55 °C

Pin Count

8

Forward Diode Voltage

1.2V

Mounting Type

Surface Mount

Minimum Gate Threshold Voltage

1.2V

Maximum Gate Threshold Voltage

2V

Maximum Operating Temperature

+175 °C

Maximum Drain Source Voltage

80 V

Maximum Gate Source Voltage

±20 V

Height

1.05mm

Maximum Power Dissipation

3.1 W

Width

5.1mm

Length

6.1mm

Maximum Continuous Drain Current

74 A

Package Type

DFN

Maximum Drain Source Resistance

8.8 mΩ

Typical Gate Charge @ Vgs

32 nC @ 10 V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 1,45

tk (rullis 1500) (ilma käibemaksuta)

€ 1,769

tk (rullis 1500) (koos käibemaksuga)

Dual N-Channel MOSFET, 74 A, 80 V, 8-Pin DFN onsemi NVMFD6H840NLWFT1GOS

€ 1,45

tk (rullis 1500) (ilma käibemaksuta)

€ 1,769

tk (rullis 1500) (koos käibemaksuga)

Dual N-Channel MOSFET, 74 A, 80 V, 8-Pin DFN onsemi NVMFD6H840NLWFT1GOS
Lao andmed ajutiselt ei ole saadaval.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Mode

Enhancement

Automotive Standard

AEC-Q101

Channel Type

N

Number of Elements per Chip

2

Transistor Configuration

Dual

Minimum Operating Temperature

-55 °C

Pin Count

8

Forward Diode Voltage

1.2V

Mounting Type

Surface Mount

Minimum Gate Threshold Voltage

1.2V

Maximum Gate Threshold Voltage

2V

Maximum Operating Temperature

+175 °C

Maximum Drain Source Voltage

80 V

Maximum Gate Source Voltage

±20 V

Height

1.05mm

Maximum Power Dissipation

3.1 W

Width

5.1mm

Length

6.1mm

Maximum Continuous Drain Current

74 A

Package Type

DFN

Maximum Drain Source Resistance

8.8 mΩ

Typical Gate Charge @ Vgs

32 nC @ 10 V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more