N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-220 STMicroelectronics STP240N10F7

RS tootekood: 168-8826Bränd: STMicroelectronicsTootja Part nr.: STP240N10F7
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

110 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220

Series

DeepGate, STripFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Width

4.6mm

Number of Elements per Chip

1

Length

10.4mm

Typical Gate Charge @ Vgs

160 nC @ 10 V

Transistor Material

Si

Height

15.75mm

Minimum Operating Temperature

-55 °C

Päritoluriik

China

Toote üksikasjad

N-Channel STripFET™ DeepGate™, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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€ 150,00

€ 3,00 tk (torus 50) (ilma käibemaksuta)

€ 183,00

€ 3,66 tk (torus 50) (koos käibemaksuga)

N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-220 STMicroelectronics STP240N10F7

€ 150,00

€ 3,00 tk (torus 50) (ilma käibemaksuta)

€ 183,00

€ 3,66 tk (torus 50) (koos käibemaksuga)

N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-220 STMicroelectronics STP240N10F7
Lao andmed ajutiselt ei ole saadaval.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

110 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220

Series

DeepGate, STripFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Width

4.6mm

Number of Elements per Chip

1

Length

10.4mm

Typical Gate Charge @ Vgs

160 nC @ 10 V

Transistor Material

Si

Height

15.75mm

Minimum Operating Temperature

-55 °C

Päritoluriik

China

Toote üksikasjad

N-Channel STripFET™ DeepGate™, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more