N-Channel MOSFET, 5 A, 60 V, 8-Pin SOIC STMicroelectronics STS5NF60L

RS tootekood: 795-8868PBränd: STMicroelectronicsTootja Part nr.: STS5NF60L
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

60 V

Series

DeepGate, STripFET

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

55 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

17 nC @ 5 V

Width

4mm

Transistor Material

Si

Height

1.65mm

Toote üksikasjad

N-Channel STripFET™ DeepGate™, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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€ 0,651

tk (rullis) (ilma käibemaksuta)

€ 0,794

tk (rullis) (koos käibemaksuga)

N-Channel MOSFET, 5 A, 60 V, 8-Pin SOIC STMicroelectronics STS5NF60L
Valige pakendi tüüp

€ 0,651

tk (rullis) (ilma käibemaksuta)

€ 0,794

tk (rullis) (koos käibemaksuga)

N-Channel MOSFET, 5 A, 60 V, 8-Pin SOIC STMicroelectronics STS5NF60L
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

60 V

Series

DeepGate, STripFET

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

55 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

17 nC @ 5 V

Width

4mm

Transistor Material

Si

Height

1.65mm

Toote üksikasjad

N-Channel STripFET™ DeepGate™, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more