Dual N-Channel MOSFET, 6.5 A, 20 V, 8-Pin TSSOP Taiwan Semi TSM6968DCA RVG

RS tootekood: 398-449Bränd: Taiwan SemiconductorTootja Part nr.: TSM6968DCA RVG
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

6.5 A

Maximum Drain Source Voltage

20 V

Package Type

TSSOP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

22 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.04 W

Transistor Configuration

Common Drain

Maximum Gate Source Voltage

-12 V, +12 V

Typical Gate Charge @ Vgs

15 nC @ 4.5 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

4.5mm

Width

3.1mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.05mm

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Dual N-Channel Power MOSFET, Taiwan Semiconductor

MOSFET Transistors, Taiwan Semiconductor

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Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 0,402

tk (pakis 50) (ilma käibemaksuta)

€ 0,49

tk (pakis 50) (koos käibemaksuga)

Dual N-Channel MOSFET, 6.5 A, 20 V, 8-Pin TSSOP Taiwan Semi TSM6968DCA RVG
Valige pakendi tüüp

€ 0,402

tk (pakis 50) (ilma käibemaksuta)

€ 0,49

tk (pakis 50) (koos käibemaksuga)

Dual N-Channel MOSFET, 6.5 A, 20 V, 8-Pin TSSOP Taiwan Semi TSM6968DCA RVG
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

6.5 A

Maximum Drain Source Voltage

20 V

Package Type

TSSOP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

22 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.04 W

Transistor Configuration

Common Drain

Maximum Gate Source Voltage

-12 V, +12 V

Typical Gate Charge @ Vgs

15 nC @ 4.5 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

4.5mm

Width

3.1mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.05mm

Toote üksikasjad

Dual N-Channel Power MOSFET, Taiwan Semiconductor

MOSFET Transistors, Taiwan Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more