N-Channel MOSFET, 1.5 A, 30 V, 3-Pin PICOSTAR Texas Instruments CSD17483F4T
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
1.5 A
Maximum Drain Source Voltage
30 V
Package Type
PICOSTAR
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
550 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.65V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Width
0.64mm
Typical Gate Charge @ Vgs
1.01 nC @ 4.5 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
1.04mm
Height
0.35mm
Series
FemtoFET
Minimum Operating Temperature
-55 °C
Toote üksikasjad
N-Channel FemtoFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,358
tk (rullis) (ilma käibemaksuta)
€ 0,437
tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
20
€ 0,358
tk (rullis) (ilma käibemaksuta)
€ 0,437
tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
20
Osta lahtiselt
| kogus | Ühikuhind | Per Rull |
|---|---|---|
| 20 - 20 | € 0,358 | € 7,16 |
| 40 - 80 | € 0,23 | € 4,60 |
| 100 - 480 | € 0,126 | € 2,52 |
| 500 - 980 | € 0,111 | € 2,22 |
| 1000+ | € 0,097 | € 1,94 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
1.5 A
Maximum Drain Source Voltage
30 V
Package Type
PICOSTAR
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
550 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.65V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Width
0.64mm
Typical Gate Charge @ Vgs
1.01 nC @ 4.5 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
1.04mm
Height
0.35mm
Series
FemtoFET
Minimum Operating Temperature
-55 °C
Toote üksikasjad
N-Channel FemtoFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products