Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
40 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
390 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Width
1.8mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
1.1 nC @ 4.2 V
Height
0.7mm
Forward Diode Voltage
1.2V
Päritoluriik
Thailand
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,094
tk (rullis 3000) (ilma käibemaksuta)
€ 0,115
tk (rullis 3000) (koos käibemaksuga)
3000
€ 0,094
tk (rullis 3000) (ilma käibemaksuta)
€ 0,115
tk (rullis 3000) (koos käibemaksuga)
3000
Osta lahtiselt
kogus | Ühikuhind | Per Rull |
---|---|---|
3000 - 3000 | € 0,094 | € 282,00 |
6000 - 6000 | € 0,09 | € 270,00 |
9000+ | € 0,085 | € 255,00 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
40 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
390 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Width
1.8mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
1.1 nC @ 4.2 V
Height
0.7mm
Forward Diode Voltage
1.2V
Päritoluriik
Thailand