Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
400 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.75 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
1 W
Maximum Gate Source Voltage
±20 V
Width
1.3mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
0.39 nC @ 4.5 V
Height
0.9mm
Forward Diode Voltage
1.1V
Päritoluriik
Thailand
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,024
tk (rullis 3000) (ilma käibemaksuta)
€ 0,029
tk (rullis 3000) (koos käibemaksuga)
3000
€ 0,024
tk (rullis 3000) (ilma käibemaksuta)
€ 0,029
tk (rullis 3000) (koos käibemaksuga)
3000
Osta lahtiselt
kogus | Ühikuhind | Per Rull |
---|---|---|
3000 - 3000 | € 0,024 | € 72,00 |
6000 - 6000 | € 0,023 | € 69,00 |
9000+ | € 0,022 | € 66,00 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
400 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.75 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
1 W
Maximum Gate Source Voltage
±20 V
Width
1.3mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
0.39 nC @ 4.5 V
Height
0.9mm
Forward Diode Voltage
1.1V
Päritoluriik
Thailand