Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
112 A
Maximum Drain Source Voltage
120 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
168 W
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.45mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.16mm
Typical Gate Charge @ Vgs
69 nC @ 10 V
Height
15.1mm
Series
U-MOSVIII-H
Forward Diode Voltage
1.2V
Toote üksikasjad
MOSFET Transistors, Toshiba
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,839
tk (pakis 10) (ilma käibemaksuta)
€ 1,024
tk (pakis 10) (koos käibemaksuga)
10
€ 0,839
tk (pakis 10) (ilma käibemaksuta)
€ 1,024
tk (pakis 10) (koos käibemaksuga)
10
Osta lahtiselt
kogus | Ühikuhind | Per Pakend |
---|---|---|
10 - 40 | € 0,839 | € 8,39 |
50 - 90 | € 0,755 | € 7,55 |
100+ | € 0,703 | € 7,03 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
112 A
Maximum Drain Source Voltage
120 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
168 W
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.45mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.16mm
Typical Gate Charge @ Vgs
69 nC @ 10 V
Height
15.1mm
Series
U-MOSVIII-H
Forward Diode Voltage
1.2V
Toote üksikasjad