Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
5.8 A
Maximum Drain Source Voltage
650 V
Series
DTMOSIV
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.05 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
6.1mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.6mm
Typical Gate Charge @ Vgs
11 nC @ 10 V
Height
2.3mm
Forward Diode Voltage
1.7V
Päritoluriik
Japan
Toote üksikasjad
MOSFET N-Channel, TK6 & TK7 Series, Toshiba
MOSFET Transistors, Toshiba
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 6,77
€ 0,677 tk (pakis 10) (ilma käibemaksuta)
€ 8,26
€ 0,826 tk (pakis 10) (koos käibemaksuga)
10
€ 6,77
€ 0,677 tk (pakis 10) (ilma käibemaksuta)
€ 8,26
€ 0,826 tk (pakis 10) (koos käibemaksuga)
10
Osta lahtiselt
kogus | Ühikuhind | Per Pakend |
---|---|---|
10 - 40 | € 0,677 | € 6,77 |
50 - 90 | € 0,607 | € 6,07 |
100 - 490 | € 0,59 | € 5,90 |
500 - 990 | € 0,565 | € 5,65 |
1000+ | € 0,55 | € 5,50 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
5.8 A
Maximum Drain Source Voltage
650 V
Series
DTMOSIV
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.05 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
6.1mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.6mm
Typical Gate Charge @ Vgs
11 nC @ 10 V
Height
2.3mm
Forward Diode Voltage
1.7V
Päritoluriik
Japan
Toote üksikasjad