Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
5.5 A
Maximum Drain Source Voltage
400 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
74 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.52mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Width
4.7mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
Height
15.85mm
Päritoluriik
China
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 65,00
€ 1,30 tk (pakis 50) (ilma käibemaksuta)
€ 79,30
€ 1,586 tk (pakis 50) (koos käibemaksuga)
50
€ 65,00
€ 1,30 tk (pakis 50) (ilma käibemaksuta)
€ 79,30
€ 1,586 tk (pakis 50) (koos käibemaksuga)
50
Osta lahtiselt
kogus | Ühikuhind | Per Pakend |
---|---|---|
50 - 50 | € 1,30 | € 65,00 |
100 - 200 | € 1,00 | € 50,00 |
250 - 450 | € 0,951 | € 47,55 |
500+ | € 0,887 | € 44,35 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
5.5 A
Maximum Drain Source Voltage
400 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
74 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.52mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Width
4.7mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
Height
15.85mm
Päritoluriik
China