Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
20 V
Package Type
SC-75
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
9 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
280 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-6 V, +6 V
Number of Elements per Chip
1
Width
0.86mm
Length
1.68mm
Typical Gate Charge @ Vgs
750 nC @ 4.5 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
0.8mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad
N-Channel MOSFET, 8V to 25V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 438,00
€ 0,146 tk (rullis 3000) (ilma käibemaksuta)
€ 534,36
€ 0,178 tk (rullis 3000) (koos käibemaksuga)
3000
€ 438,00
€ 0,146 tk (rullis 3000) (ilma käibemaksuta)
€ 534,36
€ 0,178 tk (rullis 3000) (koos käibemaksuga)
3000
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
20 V
Package Type
SC-75
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
9 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
280 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-6 V, +6 V
Number of Elements per Chip
1
Width
0.86mm
Length
1.68mm
Typical Gate Charge @ Vgs
750 nC @ 4.5 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
0.8mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad