Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
13.6 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
8 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
20 nC @ 10 V, 8.8 nC @ 4.5 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5mm
Maximum Operating Temperature
+150 °C
Height
1.5mm
Minimum Operating Temperature
-55 °C
Päritoluriik
China
Toote üksikasjad
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 3,58
€ 0,717 tk (pakis 5) (ilma käibemaksuta)
€ 4,44
€ 0,889 tk (pakis 5) (koos käibemaksuga)
Standard
5
€ 3,58
€ 0,717 tk (pakis 5) (ilma käibemaksuta)
€ 4,44
€ 0,889 tk (pakis 5) (koos käibemaksuga)
Standard
5
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
kogus | Ühikuhind | Per Pakend |
---|---|---|
5 - 45 | € 0,717 | € 3,58 |
50 - 245 | € 0,676 | € 3,38 |
250 - 495 | € 0,611 | € 3,06 |
500 - 1245 | € 0,574 | € 2,87 |
1250+ | € 0,539 | € 2,70 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
13.6 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
8 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
20 nC @ 10 V, 8.8 nC @ 4.5 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5mm
Maximum Operating Temperature
+150 °C
Height
1.5mm
Minimum Operating Temperature
-55 °C
Päritoluriik
China
Toote üksikasjad