Dual N-Channel MOSFET, 38 A, 60 V, 8-Pin PowerPAIR 3 x 3FDC Vishay SiZ250DT-T1-GE3

RS tootekood: 200-6873Bränd: VishayTootja Part nr.: SiZ250DT-T1-GE3
brand-logo
Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

38 A

Maximum Drain Source Voltage

60 V

Series

TrenchFET® Gen IV

Package Type

PowerPAIR 3 x 3FDC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0122 Ω, 0.0127 Ω, 0.01811 Ω, 0.01887 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Number of Elements per Chip

2

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 0,557

tk (rullis 3000) (ilma käibemaksuta)

€ 0,68

tk (rullis 3000) (koos käibemaksuga)

Dual N-Channel MOSFET, 38 A, 60 V, 8-Pin PowerPAIR 3 x 3FDC Vishay SiZ250DT-T1-GE3

€ 0,557

tk (rullis 3000) (ilma käibemaksuta)

€ 0,68

tk (rullis 3000) (koos käibemaksuga)

Dual N-Channel MOSFET, 38 A, 60 V, 8-Pin PowerPAIR 3 x 3FDC Vishay SiZ250DT-T1-GE3
Lao andmed ajutiselt ei ole saadaval.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

38 A

Maximum Drain Source Voltage

60 V

Series

TrenchFET® Gen IV

Package Type

PowerPAIR 3 x 3FDC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0122 Ω, 0.0127 Ω, 0.01811 Ω, 0.01887 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Number of Elements per Chip

2

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more