Vishay P-Channel MOSFET, 4.3 A, 20 V, 3-Pin SOT-23 SI2323DDS-T1-GE3

RS tootekood: 812-3110Bränd: VishayTootja Part nr.: SI2323DDS-T1-GE3
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

4.3 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

75 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

1.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Width

1.4mm

Length

3.04mm

Typical Gate Charge @ Vgs

24 nC @ 8 V

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

1.02mm

Päritoluriik

China

Toote üksikasjad

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Lao andmed ajutiselt ei ole saadaval.

€ 7,70

€ 0,385 tk (pakis 20) (ilma käibemaksuta)

€ 9,55

€ 0,477 tk (pakis 20) (koos käibemaksuga)

Vishay P-Channel MOSFET, 4.3 A, 20 V, 3-Pin SOT-23 SI2323DDS-T1-GE3
Valige pakendi tüüp

€ 7,70

€ 0,385 tk (pakis 20) (ilma käibemaksuta)

€ 9,55

€ 0,477 tk (pakis 20) (koos käibemaksuga)

Vishay P-Channel MOSFET, 4.3 A, 20 V, 3-Pin SOT-23 SI2323DDS-T1-GE3
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

kogusÜhikuhindPer Pakend
20 - 180€ 0,385€ 7,70
200 - 480€ 0,286€ 5,72
500 - 980€ 0,239€ 4,78
1000 - 1980€ 0,212€ 4,24
2000+€ 0,158€ 3,16

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JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

4.3 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

75 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

1.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Width

1.4mm

Length

3.04mm

Typical Gate Charge @ Vgs

24 nC @ 8 V

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

1.02mm

Päritoluriik

China

Toote üksikasjad

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more