Dual P-Channel MOSFET Transistor, 2.4 A, 60 V, 8-Pin SOIC Vishay SI4948BEY-T1-E3

RS tootekood: 710-3377PBränd: VishayTootja Part nr.: SI4948BEY-T1-E3
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

2.4 A

Maximum Drain Source Voltage

60 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

120 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.4 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

14.5 nC @ 10 V

Number of Elements per Chip

2

Maximum Operating Temperature

+175 °C

Length

5mm

Width

4mm

Transistor Material

Si

Height

1.55mm

Minimum Operating Temperature

-55 °C

Päritoluriik

Taiwan, Province Of China

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P.O.A.

tk (rullis) (ilma käibemaksuta)

Dual P-Channel MOSFET Transistor, 2.4 A, 60 V, 8-Pin SOIC Vishay SI4948BEY-T1-E3
Valige pakendi tüüp

Tootmispakett (Rull)

Valige pakendi tüüp

Standard - each

Saadaval mitmekordselt 5.

Tootmine -

Saadaval mitmekordselt 5.

Soovitatav suurte koguste tellimuste korral. Tooted on pakendatud masinatesse sisestamiseks, mis võimaldab teil parandada tootmise efektiivsust.

5

Saadaval mitmekordselt 5
5P.O.A.
10P.O.A.
15P.O.A.
20P.O.A.
25P.O.A.
30P.O.A.
35P.O.A.
40P.O.A.
45P.O.A.
50P.O.A.
55P.O.A.
60P.O.A.
65P.O.A.
70P.O.A.
75P.O.A.

P.O.A.

tk (rullis) (ilma käibemaksuta)

Dual P-Channel MOSFET Transistor, 2.4 A, 60 V, 8-Pin SOIC Vishay SI4948BEY-T1-E3
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Tootmispakett (Rull)

Valige pakendi tüüp

Standard - each

Saadaval mitmekordselt 5.

Tootmine -

Saadaval mitmekordselt 5.

Soovitatav suurte koguste tellimuste korral. Tooted on pakendatud masinatesse sisestamiseks, mis võimaldab teil parandada tootmise efektiivsust.

5

Saadaval mitmekordselt 5
5P.O.A.
10P.O.A.
15P.O.A.
20P.O.A.
25P.O.A.
30P.O.A.
35P.O.A.
40P.O.A.
45P.O.A.
50P.O.A.
55P.O.A.
60P.O.A.
65P.O.A.
70P.O.A.
75P.O.A.

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Teid võib huvitada

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

2.4 A

Maximum Drain Source Voltage

60 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

120 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.4 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

14.5 nC @ 10 V

Number of Elements per Chip

2

Maximum Operating Temperature

+175 °C

Length

5mm

Width

4mm

Transistor Material

Si

Height

1.55mm

Minimum Operating Temperature

-55 °C

Päritoluriik

Taiwan, Province Of China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Teid võib huvitada