Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
2.1 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
24 nC @ 10 V
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
9.8mm
Päritoluriik
China
Toote üksikasjad
N-Channel MOSFET, 500V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 25,00
€ 1,00 tk (torus) (ilma käibemaksuta)
€ 30,50
€ 1,22 tk (torus) (koos käibemaksuga)
Tootmispakett (Tuub)
25
€ 25,00
€ 1,00 tk (torus) (ilma käibemaksuta)
€ 30,50
€ 1,22 tk (torus) (koos käibemaksuga)
Tootmispakett (Tuub)
25
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
kogus | Ühikuhind | Per Tuub |
---|---|---|
25 - 95 | € 1,00 | € 5,00 |
100 - 245 | € 0,917 | € 4,58 |
250 - 495 | € 0,75 | € 3,75 |
500+ | € 0,691 | € 3,46 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
2.1 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
24 nC @ 10 V
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
9.8mm
Päritoluriik
China
Toote üksikasjad