Vishay Dual N/P-Channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC SI4532CDY-T1-GE3

RS tootekood: 787-9020Bränd: VishayTootja Part nr.: SI4532CDY-T1-GE3
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N, P

Maximum Continuous Drain Current

4.3 A, 6 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

65 mΩ, 140 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.78 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

6 nC @ 10 V, 7.8 nC @ 10 V

Maximum Operating Temperature

+150 °C

Length

5mm

Width

4mm

Transistor Material

Si

Number of Elements per Chip

2

Height

1.5mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

Dual N/P-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 11,72

€ 0,586 tk (pakis 20) (ilma käibemaksuta)

€ 14,53

€ 0,727 tk (pakis 20) (koos käibemaksuga)

Vishay Dual N/P-Channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC SI4532CDY-T1-GE3

€ 11,72

€ 0,586 tk (pakis 20) (ilma käibemaksuta)

€ 14,53

€ 0,727 tk (pakis 20) (koos käibemaksuga)

Vishay Dual N/P-Channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC SI4532CDY-T1-GE3

Lao andmed ajutiselt ei ole saadaval.

Lao andmed ajutiselt ei ole saadaval.

kogusÜhikuhindPer Pakend
20 - 180€ 0,586€ 11,72
200 - 480€ 0,498€ 9,96
500 - 980€ 0,468€ 9,36
1000 - 1980€ 0,44€ 8,80
2000+€ 0,41€ 8,20

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N, P

Maximum Continuous Drain Current

4.3 A, 6 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

65 mΩ, 140 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.78 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

6 nC @ 10 V, 7.8 nC @ 10 V

Maximum Operating Temperature

+150 °C

Length

5mm

Width

4mm

Transistor Material

Si

Number of Elements per Chip

2

Height

1.5mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

Dual N/P-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more