Vishay Dual N/P-Channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC SI4532CDY-T1-GE3
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
4.3 A, 6 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
65 mΩ, 140 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.78 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
2
Typical Gate Charge @ Vgs
6 nC @ 10 V, 7.8 nC @ 10 V
Maximum Operating Temperature
+150 °C
Length
5mm
Height
1.5mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad
Dual N/P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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€ 11,02
€ 0,551 tk (pakis 20) (ilma käibemaksuta)
€ 13,66
€ 0,683 tk (pakis 20) (koos käibemaksuga)
Standard
20
€ 11,02
€ 0,551 tk (pakis 20) (ilma käibemaksuta)
€ 13,66
€ 0,683 tk (pakis 20) (koos käibemaksuga)
Standard
20
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
| kogus | Ühikuhind | Per Pakend |
|---|---|---|
| 20 - 180 | € 0,551 | € 11,02 |
| 200 - 480 | € 0,468 | € 9,36 |
| 500 - 980 | € 0,441 | € 8,82 |
| 1000 - 1980 | € 0,414 | € 8,28 |
| 2000+ | € 0,385 | € 7,70 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
4.3 A, 6 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
65 mΩ, 140 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.78 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
2
Typical Gate Charge @ Vgs
6 nC @ 10 V, 7.8 nC @ 10 V
Maximum Operating Temperature
+150 °C
Length
5mm
Height
1.5mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad
Dual N/P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products