Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
IsocomProduct Type
Optocoupler
Mount Type
Through Hole
Maximum Forward Voltage
1.5V
Number of Channels
1
Packaging
Tape & Reel
Number of Pins
6
Package Type
DIP
Input Current Type
AC
Typical Rise Time
2μs
Maximum Input Current
60mA
Isolation Voltage
5300Vrms
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
100°C
Typical Fall Time
2μs
Standards/Approvals
EN60950 (Nemko P01102464), CECC 00802, UL (E91231), VDE 0884
Series
MOC
Automotive Standard
No
Päritoluriik
Thailand
Toote üksikasjad
The MOC8101/2/3/4/G series are constructed from a Gallium Arsenide Infrared Emitting Diode optically coupled to a monolithic silicon photo transistor detector. They have been designed and specified to meet the requirements of switchmode power supplies and other applications requiring very closely matched current transfer ratios (CTR), linearity and stable performance over the temperature range. The internal base-to-pin 6 connection has been eliminated for improved noise immunity. Surface Mount Option Available.
Lao andmed ajutiselt ei ole saadaval.
€ 18,85
€ 0,29 tk (torus 65) (ilma käibemaksuta)
€ 23,37
€ 0,36 tk (torus 65) (koos käibemaksuga)
65
€ 18,85
€ 0,29 tk (torus 65) (ilma käibemaksuta)
€ 23,37
€ 0,36 tk (torus 65) (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
65
| kogus | Ühikuhind | Per Tuub |
|---|---|---|
| 65 - 65 | € 0,29 | € 18,85 |
| 130 - 260 | € 0,243 | € 15,80 |
| 325+ | € 0,226 | € 14,69 |
Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
IsocomProduct Type
Optocoupler
Mount Type
Through Hole
Maximum Forward Voltage
1.5V
Number of Channels
1
Packaging
Tape & Reel
Number of Pins
6
Package Type
DIP
Input Current Type
AC
Typical Rise Time
2μs
Maximum Input Current
60mA
Isolation Voltage
5300Vrms
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
100°C
Typical Fall Time
2μs
Standards/Approvals
EN60950 (Nemko P01102464), CECC 00802, UL (E91231), VDE 0884
Series
MOC
Automotive Standard
No
Päritoluriik
Thailand
Toote üksikasjad
The MOC8101/2/3/4/G series are constructed from a Gallium Arsenide Infrared Emitting Diode optically coupled to a monolithic silicon photo transistor detector. They have been designed and specified to meet the requirements of switchmode power supplies and other applications requiring very closely matched current transfer ratios (CTR), linearity and stable performance over the temperature range. The internal base-to-pin 6 connection has been eliminated for improved noise immunity. Surface Mount Option Available.
