Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
onsemiProduct Type
Optocoupler
Mount Type
Through Hole
Maximum Forward Voltage
1.3V
Number of Channels
2
Packaging
Tube
Number of Pins
8
Package Type
PDIP
Input Current Type
DC
Typical Rise Time
2.4μs
Maximum Input Current
10mA
Isolation Voltage
5kVrms
Minimum Operating Temperature
-55°C
Maximum Current Transfer Ratio
6%
Maximum Operating Temperature
100°C
Typical Fall Time
2.4μs
Minimum Current Transfer Ratio
0.5%
Standards/Approvals
EN, IEC, UL
Series
MCT
Automotive Standard
No
Toote üksikasjad
The MCT9001 optocoupler has two channels for density applications. For four channel applications, two packages fit into a standard 16-pin DIP socket. Each channel is an NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode.
Lao andmed ajutiselt ei ole saadaval.
€ 26,85
€ 0,537 tk (torus 50) (ilma käibemaksuta)
€ 33,29
€ 0,666 tk (torus 50) (koos käibemaksuga)
50
€ 26,85
€ 0,537 tk (torus 50) (ilma käibemaksuta)
€ 33,29
€ 0,666 tk (torus 50) (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
50
| kogus | Ühikuhind | Per Tuub |
|---|---|---|
| 50 - 50 | € 0,537 | € 26,85 |
| 100 - 950 | € 0,315 | € 15,75 |
| 1000 - 1950 | € 0,307 | € 15,35 |
| 2000 - 9950 | € 0,299 | € 14,95 |
| 10000+ | € 0,292 | € 14,60 |
Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
onsemiProduct Type
Optocoupler
Mount Type
Through Hole
Maximum Forward Voltage
1.3V
Number of Channels
2
Packaging
Tube
Number of Pins
8
Package Type
PDIP
Input Current Type
DC
Typical Rise Time
2.4μs
Maximum Input Current
10mA
Isolation Voltage
5kVrms
Minimum Operating Temperature
-55°C
Maximum Current Transfer Ratio
6%
Maximum Operating Temperature
100°C
Typical Fall Time
2.4μs
Minimum Current Transfer Ratio
0.5%
Standards/Approvals
EN, IEC, UL
Series
MCT
Automotive Standard
No
Toote üksikasjad
The MCT9001 optocoupler has two channels for density applications. For four channel applications, two packages fit into a standard 16-pin DIP socket. Each channel is an NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode.
