Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
Bipolar Transistor
Maximum DC Collector Current Idc
10A
Maximum Collector Emitter Voltage Vceo
50V
Package Type
SOT-223
Mount Type
Surface
Transistor Configuration
Single
Transistor Polarity
NPN
Minimum DC Current Gain hFE
100
Maximum Emitter Base Voltage VEBO
5V
Maximum Power Dissipation Pd
1.4W
Minimum Operating Temperature
-65°C
Maximum Transition Frequency ft
1MHz
Pin Count
4
Maximum Operating Temperature
150°C
Length
6.7mm
Height
1.8mm
Standards/Approvals
No
Width
3.7mm
Automotive Standard
No
Toote üksikasjad
The 2STF1550 and 2STN1550 are NPN transistors manufactured using new PB-HCD (Power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
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Lao andmed ajutiselt ei ole saadaval.
€ 13,90
€ 0,556 tk (pakis 25) (ilma käibemaksuta)
€ 17,24
€ 0,689 tk (pakis 25) (koos käibemaksuga)
Standard
25
€ 13,90
€ 0,556 tk (pakis 25) (ilma käibemaksuta)
€ 17,24
€ 0,689 tk (pakis 25) (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
Standard
25
| kogus | Ühikuhind | Per Pakend |
|---|---|---|
| 25 - 225 | € 0,556 | € 13,90 |
| 250 - 600 | € 0,50 | € 12,50 |
| 625+ | € 0,41 | € 10,25 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
Bipolar Transistor
Maximum DC Collector Current Idc
10A
Maximum Collector Emitter Voltage Vceo
50V
Package Type
SOT-223
Mount Type
Surface
Transistor Configuration
Single
Transistor Polarity
NPN
Minimum DC Current Gain hFE
100
Maximum Emitter Base Voltage VEBO
5V
Maximum Power Dissipation Pd
1.4W
Minimum Operating Temperature
-65°C
Maximum Transition Frequency ft
1MHz
Pin Count
4
Maximum Operating Temperature
150°C
Length
6.7mm
Height
1.8mm
Standards/Approvals
No
Width
3.7mm
Automotive Standard
No
Toote üksikasjad
The 2STF1550 and 2STN1550 are NPN transistors manufactured using new PB-HCD (Power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
