Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
Bipolar Transistor
Maximum DC Collector Current Idc
10A
Maximum Collector Emitter Voltage Vceo
50V
Package Type
SOT-223
Mount Type
Surface
Transistor Configuration
Single
Maximum Power Dissipation Pd
1.4W
Transistor Polarity
NPN
Minimum DC Current Gain hFE
100
Maximum Emitter Base Voltage VEBO
5V
Minimum Operating Temperature
-65°C
Maximum Transition Frequency ft
1MHz
Pin Count
4
Maximum Operating Temperature
150°C
Length
6.7mm
Height
1.8mm
Standards/Approvals
No
Width
3.7mm
Automotive Standard
No
Toote üksikasjad
The 2STF1550 and 2STN1550 are NPN transistors manufactured using new PB-HCD (Power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
Lao andmed ajutiselt ei ole saadaval.
€ 298,00
€ 0,298 tk (rullis 1000) (ilma käibemaksuta)
€ 369,52
€ 0,37 tk (rullis 1000) (koos käibemaksuga)
1000
€ 298,00
€ 0,298 tk (rullis 1000) (ilma käibemaksuta)
€ 369,52
€ 0,37 tk (rullis 1000) (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
1000
Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
Bipolar Transistor
Maximum DC Collector Current Idc
10A
Maximum Collector Emitter Voltage Vceo
50V
Package Type
SOT-223
Mount Type
Surface
Transistor Configuration
Single
Maximum Power Dissipation Pd
1.4W
Transistor Polarity
NPN
Minimum DC Current Gain hFE
100
Maximum Emitter Base Voltage VEBO
5V
Minimum Operating Temperature
-65°C
Maximum Transition Frequency ft
1MHz
Pin Count
4
Maximum Operating Temperature
150°C
Length
6.7mm
Height
1.8mm
Standards/Approvals
No
Width
3.7mm
Automotive Standard
No
Toote üksikasjad
The 2STF1550 and 2STN1550 are NPN transistors manufactured using new PB-HCD (Power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.