Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
SiC Power Module
Maximum Continuous Drain Current Id
75A
Maximum Drain Source Voltage Vds
1200V
Package Type
ACEPACK 2
Series
A2F
Mount Type
Chassis
Maximum Drain Source Resistance Rds
17mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-40°C
Forward Voltage Vf
1.5V
Maximum Operating Temperature
175°C
Standards/Approvals
UL
Automotive Standard
AEC-Q101
Toote üksikasjad
The STMicroelectronics is designed as power module in four pack topology integrates advanced silicon carbide power MOSFET technology. The module leverages the innovative properties of the wide-bandgap SiC material and a high-thermal-performance substrate.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Lao andmed ajutiselt ei ole saadaval.
€ 5 058,00
€ 281,00 Each (In a Tray of 18) (ilma käibemaksuta)
€ 6 271,92
€ 348,44 Each (In a Tray of 18) (koos käibemaksuga)
18
€ 5 058,00
€ 281,00 Each (In a Tray of 18) (ilma käibemaksuta)
€ 6 271,92
€ 348,44 Each (In a Tray of 18) (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
18
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
SiC Power Module
Maximum Continuous Drain Current Id
75A
Maximum Drain Source Voltage Vds
1200V
Package Type
ACEPACK 2
Series
A2F
Mount Type
Chassis
Maximum Drain Source Resistance Rds
17mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-40°C
Forward Voltage Vf
1.5V
Maximum Operating Temperature
175°C
Standards/Approvals
UL
Automotive Standard
AEC-Q101
Toote üksikasjad
The STMicroelectronics is designed as power module in four pack topology integrates advanced silicon carbide power MOSFET technology. The module leverages the innovative properties of the wide-bandgap SiC material and a high-thermal-performance substrate.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
