Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type P, Type N
Maximum Continuous Drain Current Id
6.5A
Maximum Drain Source Voltage Vds
650V
Package Type
QFN-9
Series
MASTERG
Mount Type
Surface
Pin Count
31
Maximum Drain Source Resistance Rds
300mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
1.5nC
Maximum Power Dissipation Pd
40mW
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
125°C
Length
9mm
Height
1mm
Standards/Approvals
RoHS, ECOPACK
Width
9mm
Automotive Standard
No
Päritoluriik
Thailand
Toote üksikasjad
The STMicroelectronics Microcontroller is an advanced power system in package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration. The integrated power GaNs have RDS(ON) of 225 mΩ, 650 V drain‑source blocking voltage, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Lao andmed ajutiselt ei ole saadaval.
€ 18 000,00
€ 6,00 tk (rullis 3000) (ilma käibemaksuta)
€ 22 320,00
€ 7,44 tk (rullis 3000) (koos käibemaksuga)
3000
€ 18 000,00
€ 6,00 tk (rullis 3000) (ilma käibemaksuta)
€ 22 320,00
€ 7,44 tk (rullis 3000) (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
3000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type P, Type N
Maximum Continuous Drain Current Id
6.5A
Maximum Drain Source Voltage Vds
650V
Package Type
QFN-9
Series
MASTERG
Mount Type
Surface
Pin Count
31
Maximum Drain Source Resistance Rds
300mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
1.5nC
Maximum Power Dissipation Pd
40mW
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
125°C
Length
9mm
Height
1mm
Standards/Approvals
RoHS, ECOPACK
Width
9mm
Automotive Standard
No
Päritoluriik
Thailand
Toote üksikasjad
The STMicroelectronics Microcontroller is an advanced power system in package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration. The integrated power GaNs have RDS(ON) of 225 mΩ, 650 V drain‑source blocking voltage, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
