Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Dual N
Maximum Drain Source Voltage Vds
95V
Package Type
LBB
Mount Type
Surface
Pin Count
5
Maximum Drain Source Resistance Rds
1Ω
Minimum Operating Temperature
-55°C
Maximum Gate Source Voltage Vgs
10V
Maximum Operating Temperature
150°C
Length
28.95mm
Height
2.1mm
Standards/Approvals
2002/95/EC
Width
5.85mm
Automotive Standard
No
Päritoluriik
China
Toote üksikasjad
The STMicroelectronics 120 W LDMOS FET, designed for broadband commercial communications, TV broadcast, avionics and industrial applications with frequencies from HF to 1.5 GHz. It can be used in class AB/B and class C for all typical modulation formats.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Lao andmed ajutiselt ei ole saadaval.
€ 22 500,00
€ 225,00 tk (rullis 100) (ilma käibemaksuta)
€ 27 900,00
€ 279,00 tk (rullis 100) (koos käibemaksuga)
100
€ 22 500,00
€ 225,00 tk (rullis 100) (ilma käibemaksuta)
€ 27 900,00
€ 279,00 tk (rullis 100) (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
100
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Dual N
Maximum Drain Source Voltage Vds
95V
Package Type
LBB
Mount Type
Surface
Pin Count
5
Maximum Drain Source Resistance Rds
1Ω
Minimum Operating Temperature
-55°C
Maximum Gate Source Voltage Vgs
10V
Maximum Operating Temperature
150°C
Length
28.95mm
Height
2.1mm
Standards/Approvals
2002/95/EC
Width
5.85mm
Automotive Standard
No
Päritoluriik
China
Toote üksikasjad
The STMicroelectronics 120 W LDMOS FET, designed for broadband commercial communications, TV broadcast, avionics and industrial applications with frequencies from HF to 1.5 GHz. It can be used in class AB/B and class C for all typical modulation formats.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
