Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Dual N
Maximum Drain Source Voltage Vds
95V
Package Type
LBB
Mount Type
Surface
Pin Count
5
Maximum Drain Source Resistance Rds
1Ω
Minimum Operating Temperature
-55°C
Maximum Gate Source Voltage Vgs
10V
Maximum Operating Temperature
150°C
Length
28.95mm
Height
2.1mm
Standards/Approvals
2002/95/EC
Width
5.85mm
Automotive Standard
No
Päritoluriik
China
Toote üksikasjad
The STMicroelectronics 120 W LDMOS FET, designed for broadband commercial communications, TV broadcast, avionics and industrial applications with frequencies from HF to 1.5 GHz. It can be used in class AB/B and class C for all typical modulation formats.
Lao andmed ajutiselt ei ole saadaval.
€ 224,00
€ 224,00 tk (ilma käibemaksuta)
€ 277,76
€ 277,76 tk (koos käibemaksuga)
Standard
1
€ 224,00
€ 224,00 tk (ilma käibemaksuta)
€ 277,76
€ 277,76 tk (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
Standard
1
Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Dual N
Maximum Drain Source Voltage Vds
95V
Package Type
LBB
Mount Type
Surface
Pin Count
5
Maximum Drain Source Resistance Rds
1Ω
Minimum Operating Temperature
-55°C
Maximum Gate Source Voltage Vgs
10V
Maximum Operating Temperature
150°C
Length
28.95mm
Height
2.1mm
Standards/Approvals
2002/95/EC
Width
5.85mm
Automotive Standard
No
Päritoluriik
China
Toote üksikasjad
The STMicroelectronics 120 W LDMOS FET, designed for broadband commercial communications, TV broadcast, avionics and industrial applications with frequencies from HF to 1.5 GHz. It can be used in class AB/B and class C for all typical modulation formats.