Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
45A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
100mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
105nC
Maximum Power Dissipation Pd
270W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
3.5V
Maximum Operating Temperature
200°C
Length
15.75mm
Height
20.15mm
Standards/Approvals
No
Automotive Standard
No
Toote üksikasjad
Silicon carbide (SiC) MOSFETs feature very low static drain-source on-resistance for the 1200V rating combined with excellent switching performance, translating into more efficient and Compact systems.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Lao andmed ajutiselt ei ole saadaval.
€ 18,00
€ 18,00 tk (ilma käibemaksuta)
€ 22,32
€ 22,32 tk (koos käibemaksuga)
Standard
1
€ 18,00
€ 18,00 tk (ilma käibemaksuta)
€ 22,32
€ 22,32 tk (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
Standard
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Tehnilised Dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
45A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
100mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
105nC
Maximum Power Dissipation Pd
270W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
3.5V
Maximum Operating Temperature
200°C
Length
15.75mm
Height
20.15mm
Standards/Approvals
No
Automotive Standard
No
Toote üksikasjad
Silicon carbide (SiC) MOSFETs feature very low static drain-source on-resistance for the 1200V rating combined with excellent switching performance, translating into more efficient and Compact systems.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
